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| PDTC144V Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ | |||
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NXP Semiconductors
PDTC144V series
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter
VCE = 30 V; IB = 0 A
cut-off current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 μA
VCE = 300 mV; IC = 2 mA
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
100
nA
-
-
1
μA
-
-
50
μA
-
-
150
μA
40
-
-
-
-
150
mV
-
3.1
1
V
6
3.8
-
V
33
47
61
kΩ
0.17
0.21
0.26
-
-
2
pF
PDTC144V_SER_4
Product data sheet
Rev. 04 â 16 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 11
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