PBHV8140Z Datasheet, PDF (6/12 Pages) NXP Semiconductors – 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV8140Z
500 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
300
h_FE
(1)
200
(2)
100
(3)
006aab903
2.0
I_C
(A)
1.6
1.2
0.8
I_B (mA) = 360
006aab904
324
288
252
216
180
144
108
72
36
0.4
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
1.2
V_BE
(V)
0.8
(1)
(2)
(3)
0.4
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0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
1.0
006aab906
(1)
0.8
(2)
0.6
(3)
0.4
0.0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
0.2
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 10 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 5
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBHV8140Z_1
Product data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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