|
PBHV8140Z Datasheet, PDF (1/12 Pages) NXP Semiconductors – 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor | |||
|
PBHV8140Z
500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9540Z.
1.2 Features
 High voltage
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 AEC-Q101 qualified
 Medium power SMD plastic package
1.3 Applications
 LED driver for LED chain module
 LCD backlighting
 Automotive motor management
 Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
VBE = 0 V
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
-
-
500 V
-
-
400 V
-
-
1
A
[1] 100 155 -
|
▷ |