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| PBHV8140Z Datasheet, PDF (5/12 Pages) NXP Semiconductors – 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor | |||
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NXP Semiconductors
PBHV8140Z
500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off VCB = 320 V; IE = 0 A
-
current
VCB = 320 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter cut-off VCE = 320 V; VBE = 0 V
-
current
IEBO
emitter-base cut-off
VEB = 4 V; IC = 0 A
-
current
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = 10 V
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1 A
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 20 mA
IC = 500 mA; IB = 100 mA
IC = 1 A; IB = 200 mA
IC = 1 A; IB = 200 mA
100
[1] 80
[1] 35
[1] 10
[1] -
[1] -
[1] -
[1] -
[1] -
VBEsat
base-emitter saturation IC = 1 A; IB = 200 mA
[1] -
voltage
td
delay time
tr
rise time
VCC = 6 V; IC = 0.5 A;
-
IBon = 0.1 A; IBoff = â0.1 A
-
ton
turn-on time
-
ts
storage time
-
tf
fall time
-
toff
turn-off time
-
fT
transition frequency VCE = 10 V; IC = 10 mA;
-
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
-
f = 1 MHz
Ce
emitter capacitance
VEB = 0.5 V; IC = ic = 0 A;
-
f = 1 MHz
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Typ Max Unit
-
100 nA
-
10 μA
-
100 nA
-
100 nA
155 -
150 -
65 -
20 -
45 80 mV
30 50 mV
85 140 mV
150 250 mV
150 250 mΩ
0.95 1.1 V
25 -
2820 -
2845 -
2585 -
1215 -
3800 -
25 -
ns
ns
ns
ns
ns
ns
MHz
12 -
pF
600 -
pF
PBHV8140Z_1
Product data sheet
Rev. 01 â 11 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 12
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