OC1005 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
240
T_j = 25 °C
I_D
(A)
160
80
10 V 9 V
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8.5 V
8V
7V
6V
V_GS = 5 V
20
R_DSon
(mΩ)
Tj = 25 °C
15
10
5
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V_GS = 7.5 V 8 V
8.5 V
9V
10 V
0
0
1
2
3
4
V_DS (V)
0
0
80
160
240
ID (A)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
80
I_D
(A)
V_DS > I_D × R_DSon
60
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2
a
1.5
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40
1
Tj = 175 °C
25 °C
20
0.5
0
0
2
4
6
V_GS (V)
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
−60
0
60
120
180
T_j (°C)
a = -_R---_D----^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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