OC1005 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
OC1005
SC-46
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT78
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
25 °C ≤ T_j ≤ 175 °C
25 °C ≤ T_j ≤ 175 °C; R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
I_SM
peak source current
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 75 A;
t_p = 0.1 ms; V_DS ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; starting at T_j = 25 °C
Min
-
-
-
[1] _-
-
-
-
−55
−55
[1] _-
-
-
Max
55
55
±20
110
80
390
200
+175
+175
110
390
280
[1] Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A.
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
OC1005_2
Product data sheet
Rev. 02 — 10 December 2007
© NXP B.V. 2007. All rights reserved.
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