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| OC1005 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
OC1005
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
IDSS
drain leakage current
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; see Figure 6 and 8
Tj = 25 °C
Tj = 175 °C
Dynamic characteristics
QG(tot) total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 25 A; VDS = 44 V; VGS = 10 V;
see Figure 11 and 12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 14
VDS = 30 V; RL = 1.2 â¦;
VGS = 10 V; RG = 10 â¦
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
IS = 25 A; VGS = 0 V; see Figure 13
IS = 20 A; dIS/dt = â100 A/µs; VGS = 0 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
-
1
µA
-
-
500 µA
-
2
100 nA
-
5.8 7.1 mâ¦
-
10.6 14.2 mâ¦
-
53 -
nC
-
12.3 -
nC
-
17 -
nC
-
2820 -
pF
-
554 -
pF
-
200 -
pF
-
24 -
ns
-
52 -
ns
-
77 -
ns
-
41 -
ns
-
0.85 1.2 V
-
62 -
ns
-
60 -
nC
OC1005_2
Product data sheet
Rev. 02 â 10 December 2007
© NXP B.V. 2007. All rights reserved.
5 of 12
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