BUK764R0-75C Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
200
I_D
20
(A)
8
150
6
100
003aab377
5.5
12
R_DSon
(mΩ)
10
8
6
003aab386
50
5
V_GS (V) = 4.5
0
0
2
4
6
8 _{VDS (V)} 10
4
2
5
10
15 _{VGS (V)} 20
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
8
003aab387
2.4
R_DSon
a
(mΩ)
V_GS (V) = 5.5
1.8
6
6
1.2
8
4
10
0.6
20
03aa28
2
0
70
T_j = 25 °C
140 _{ID (A)} 210
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
T_j (°C)
a = -_R----_D---^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK764R0-75C_1
Product data sheet
Rev. 01 — 17 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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