BUK764R0-75C Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
BUK764R0-75C
D2PAK
4. Limiting values
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
Version
SOT404
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2 and 3
-
-
-
[1][2] _-
[2][3] _-
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
[2][3] _-
-
-
−55
−55
I_DR
reverse drain current
T_mb = 25 °C
[1][2] _-
[1][3] _-
I_DRM
peak reverse drain current T_mb = 25 °C; pulsed; t_p ≤ 10 µs
-
Avalanche ruggedness
E_DS(AL)S non-repetitive drain-source unclamped inductive load; I_D = 100 A; V_DS ≤ 75 V;
-
avalanche energy
R_GS = 50 Ω; V_GS = 10 V; starting at T_j = 25 °C
E_DS(AL)R repetitive drain-source
[4] _-
avalanche energy
[1] Current is limited by chip power dissipation rating.
[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by T_j(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
Max Unit
75
V
75
V
±20
V
199
A
100
A
100
A
797
A
333
W
+175 °C
+175 °C
199
A
100
A
797
A
630
mJ
-
J
BUK764R0-75C_1
Product data sheet
Rev. 01 — 17 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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