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BUK764R0-75C Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 01 — 17 August 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,
using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
I TrenchMOS technology
I 175 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V, 24 V and 42 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 630 mJ
I ID ≤ 100 A
I RDSon = 3.4 mΩ (typ)
I Ptot ≤ 333 W
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to
drain
Simplified outline
[1]
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
Symbol
D
G
mbb076 S