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| BUK6E2R0-30C Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
LS
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 2.5 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 16
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 16
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 16
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 16
ID = 25 A; VDS = 24 V; VGS = 5 V;
see Figure 12; see Figure 13
ID = 25 A; VDS = 24 V; VGS = 10 V;
see Figure 12; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 25 V; RL = 1 â¦; VGS = 10 V;
RG(ext) = 10 â¦
from drain lead 6 mm from package to
centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.8 2.3 2.8 V
-
-
3.3 V
0.8 -
-
V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
1.9 2.2 mâ¦
-
2.3 3
mâ¦
-
2.6 3.7 mâ¦
-
3.4 4.2 mâ¦
-
131 -
nC
-
229 -
nC
-
38
-
nC
-
63 -
nC
-
11223 14964 pF
-
1780 2136 pF
-
1085 1486 pF
-
53
-
ns
-
114 -
ns
-
363 -
ns
-
192 -
ns
-
4.5 -
nH
-
7.5 -
nH
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 7 September 2010
© NXP B.V. 2010. All rights reserved.
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