BUK6E2R0-30C Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
Min
-
[1][2]
-16
[3][4]
-20
I_D
drain current
I_DM
peak drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1 ^[5]
-
T_mb = 100 °C; V_GS = 10 V; see Figure 1 ^[5]
-
T_mb = 25 °C; t_p ≤ 10 µs; pulsed;
-
see Figure 3
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
-
T_stg
storage temperature
-55
T_j
junction temperature
-55
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
E_DS(AL)R
repetitive drain-source
avalanche energy
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[5]
-
-
I_D = 120 A; V_sup ≤ 30 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
-
[6][7][8] _-
[1] DC
[2] -16V accumulated duration not to exceed 168 hrs.
[3] Pulsed
[4] Accumulated pulse duration not to exceed 5mins.
[5] Continuous current is limited by package.
[6] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[7] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[8] Refer to application note AN10273 for further information.
Max Unit
30 V
16 V
20 V
120 A
120 A
1082 A
306 W
175 °C
175 °C
120 A
1082 A
1.7 J
-
J
BUK6E2R0-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 September 2010
© NXP B.V. 2010. All rights reserved.
3 of 15