BUK6E2R0-30C Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 7 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for intermediate level gate
drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V Automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 16
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 120 A; V_sup ≤ 30 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
30 V
[1]
-
-
120 A
-
-
306 W
-
1.9 2.2 mΩ
-
-
1.7 J