BUK6208-40C Datasheet, PDF (6/11 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6208-40C
N-channel TrenchMOS intermediate level FET
4
V_GS(th)
(V)
3
2
1
max
typ
min
003aad805
0
-60
0
60
120
180
T_j (°C)
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
Fig 3. Gate-source threshold voltage as a function of Fig 4. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
2.5
a
2
003aad793
1.5
1
0.5
0
-60
0
60
120
180
T_j (°C)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 5. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 6. Gate charge waveform definitions
BUK6208-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
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