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BUK6208-40C Datasheet, PDF (5/11 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
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NXP Semiconductors
BUK6208-40C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 3; see Figure 4
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 3
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 3
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 15 A; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 5
ID = 25 A; VDS = 32 V; VGS = 10 V;
see Figure 6
ID = 25 A; VDS = 32 V; VGS = 5 V;
see Figure 6
ID = 25 A; VDS = 32 V; VGS = 10 V;
see Figure 6
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
from upper edge of drain mounting base
to centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V
BUK6208-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 April 2010
Min Typ Max Unit
40 -
-
V
36 -
-
V
1.8 2.3 2.8 V
-
-
3.3 V
0.8 -
-
V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
6.6 8
mΩ
-
-
[tbd] mΩ
-
-
[tbd] mΩ
-
-
16.8 mΩ
-
-
-
nC
-
-
-
nC
-
-
-
nC
-
-
-
nC
-
3000 [tbd] pF
-
450 [tbd] pF
-
330 [tbd] pF
-
-
-
ns
-
-
-
ns
-
-
-
ns
-
-
-
ns
-
3.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
-
-
ns
-
-
-
nC
© NXP B.V. 2010. All rights reserved.
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