BUK6208-40C Datasheet, PDF (3/11 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6208-40C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
V_GS
gate-source voltage
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
Pulsed
T_mb = 25 °C; V_GS = 10 V
T_mb = 100 °C; V_GS = 10 V
T_mb = 25 °C; t_p ≤ 10 µs; pulsed
T_mb = 25 °C; see Figure 1
DC
-
-
[1]
-20 -
[2]
-
-
[2]
-
-
-
-
-
-
-55 -
-55 -
-16 -
40 V
20 V
50 A
50 A
349 A
128 W
175 °C
175 °C
16 V
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[2]
-
-
50 A
-
-
349 A
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 50 A; V_sup ≤ 40 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
-
-
210 mJ
E_DS(AL)R
repetitive drain-source
avalanche energy
[3][4][5] _-
-
-
J
[1] Accumulated pulse duration not to exceed 5mins.
[2] Continuous current is limited by package.
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[5] Refer to application note AN10273 for further information.
BUK6208-40C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 April 2010
© NXP B.V. 2010. All rights reserved.
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