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BTA316-600ET Datasheet, PDF (6/13 Pages) NXP Semiconductors – 16 A three-quadrant high commutation triac
NXP Semiconductors
BTA316-600ET
16 A three-quadrant high commutation triac
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 8
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 9
VT
on-state voltage
IT = 18 A; Tj = 25 °C; see Figure 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 400 V; IT = 0.1 A; Tj = 150 °C;
see Figure 11
ID
off-state current
Dynamic characteristics
VD = 600 V; Tj = 150 °C
dVD/dt
rate of rise of off-state VDM = 402 V; Tj = 150 °C; exponential
voltage
waveform
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; "without snubber"
condition; gate open circuit
VD 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 1 V/µs; gate open circuit
tgt
gate-controlled turn-on ITM = 20 A; VD = 600 V; IG = 0.1 A;
time
dIG/dt = 5 A/µs
Min Typ Max Unit
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
25
mA
-
-
30
mA
-
-
30
mA
-
-
15
mA
-
1.3 1.5 V
-
0.8 1.5 V
0.25 -
-
V
-
0.24 1.2 mA
20
-
-
V/µs
1.2 -
-
A/ms
0.8 -
-
A/ms
6
-
-
-
2
-
A/ms
µs
BTA316-600ET_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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