BTA316-600ET Datasheet, PDF (2/13 Pages) NXP Semiconductors – 16 A three-quadrant high commutation triac

NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
BTA316-600ET
16 A three-quadrant high commutation triac
Simplified outline
mb
Graphic symbol
T2
T1
G
sym051
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
BTA316-600ET
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DRM
repetitive peak off-state
voltage
I_T(RMS)
I_TSM
RMS on-state current
non-repetitive peak
on-state current
full sine wave; T_mb ≤ 126 °C; see Figure 3, 1 and 2
full sine wave; T_j(init) = 25 °C; t_p = 20 ms; see Figure 4
and 5
I²t
dI_T/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; T_j(init) = 25 °C; t_p = 16.7 ms
t_p = 10 ms; sine-wave pulse
I_T = 20 A; I_G = 0.2 A; dI_G/dt = 0.2 A/µs
I_GM
P_GM
P_G(AV)
T_stg
T_j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Min Max Unit
-
600 V
-
16
A
-
140 A
-
150 A
-
98
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
150 °C
BTA316-600ET_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 30 March 2010
© NXP B.V. 2010. All rights reserved.
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