BTA316-600ET Datasheet, PDF (1/13 Pages) NXP Semiconductors – 16 A three-quadrant high commutation triac

BTA316-600ET
16 A three-quadrant high commutation triac
Rev. 01 — 30 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar passivated, new generation, high commutation, high operating junction
temperature, three-quadrant triac in a SOT78 plastic package.
1.2 Features and benefits
„ Hi-Com triac with maximum false
trigger immunity
„ High operating junction temperature
„ Planar passivated
„ Sensitive gate for direct triggering from
microcontrollers and logic ICs
„ Triggering in three quadrants only
1.3 Applications
„ Applications subject to high
temperature
„ Electronic thermostats, heating and
cooking controls
„ High power motor controls in washing
machines and vacuum cleaners
„ Refrigeration and air-conditioner
compressor controls
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DRM
repetitive peak
off-state voltage
I_TSM
T_j
I_T(RMS)
non-repetitive peak full sine wave; T_j(init) = 25 °C;
on-state current
t_p = 20 ms; see Figure 4 and 5
junction temperature
RMS on-state
current
full sine wave; T_mb ≤ 126 °C;
see Figure 3, 1 and 2
Static characteristics
I_GT
gate trigger current V_D = 12 V; I_T = 0.1 A; T2+ G+;
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2+ G-;
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2- G-;
T_j = 25 °C; see Figure 7
Min Typ Max Unit
-
-
600 V
-
-
140 A
-
-
150 °C
-
-
16 A
-
-
10 mA
-
-
10 mA
-
-
10 mA