BAT46WH Datasheet, PDF (6/12 Pages) NXP Semiconductors – Single Schottky barrier diode

NXP Semiconductors
BAT46WH
Single Schottky barrier diode
0.25
P_R(AV)
(W)
0.20
006aac399
0.15
0.10
0.05
(1)
(2)
(3)
(4)
0.0
0
20
40
60
80
100
V_R (V)
T_j = 125 C
(1)  = 1
(2)  = 0.9
(3)  = 0.8
(4)  = 0.5
Fig 6. Average reverse power dissipation as a
function of reverse voltage; typical values
0.3
I_F(AV)
(1)
(A)
0.2
(2)
006aac401
(3)
0.1
(4)
0.3
I_F(AV)
(1)
(A)
0.2
(2)
(3)
0.1
(4)
006aac400
0.0
0
25 50 75 100 125 150 175
T_amb (°C)
FR4 PCB, standard footprint
T_j = 150 C
(1)  = 1; DC
(2)  = 0.5; f = 20 kHz
(3)  = 0.2; f = 20 kHz
(4)  = 0.1; f = 20 kHz
Fig 7. Average forward current as a function of
ambient temperature; typical values
0.3
I_F(AV)
(1)
(A)
0.2
(2)
006aac402
(3)
0.1
(4)
0.0
0
25 50 75 100 125 150 175
T_amb (°C)
FR4 PCB, mounting pad for cathode 1 cm²
T_j = 150 C
(1)  = 1; DC
(2)  = 0.5; f = 20 kHz
(3)  = 0.2; f = 20 kHz
(4)  = 0.1; f = 20 kHz
Fig 8. Average forward current as a function of
ambient temperature; typical values
0.0
0
25 50 75 100 125 150 175
T_sp (°C)
T_j = 150 C
(1)  = 1; DC
(2)  = 0.5; f = 20 kHz
(3)  = 0.2; f = 20 kHz
(4)  = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
solder point temperature; typical values
BAT46WH
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 November 2011
© NXP B.V. 2011. All rights reserved.
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