74HC2G02 Datasheet, PDF (6/13 Pages) NXP Semiconductors – Dual 2-input NOR gate

NXP Semiconductors
74HC2G02; 74HCT2G02
Dual 2-input NOR gate
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ^[1] Max
74HCT2G02
t_pd
propagation delay nA and nB to nY; see Figure 6
[2]
V_CC = 4.5 V
-
12
24
V_CC = 5.0 V; C_L = 15 pF
t_t
transition time
V_CC = 4.5 V; see Figure 6
C_PD
power dissipation V_I = GND to V_CC − 1.5 V
capacitance
-
[3]
-
[4]
-
12
-
6
19
10
-
−40 °C to +125 °C Unit
Min
Max
-
29 ns
-
-
ns
-
22 ns
-
-
pF
[1] All typical values are measured at T_amb = 25 °C.
[2] t_pd is the same as t_PLH and t_PHL.
[3] t_t is the same as t_TLH and t_THL.
[4] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of outputs.
12. Waveforms
V_I
nA, nB input
GND
V_OH
nY output
V_OL
V_M
t_PHL
V_M
t_THL
V_M
V_M
10%
t_PLH
90%
t_TLH
001aae759
Fig 6.
Measurement points are given in Table 9.
V_OL and V_OH are typical output voltage levels that occur with the output load.
Propagation delay data input (nA, nB) to data output (nY) and transition time output (nY)
Table 9. Measurement points
Type
74HC2G02
74HCT2G02
Input
V_M
0.5 × V_CC
1.3 V
Output
V_M
0.5 × V_CC
1.3 V
74HC_HCT2G02_4
Product data sheet
Rev. 04 — 11 May 2009
© NXP B.V. 2009. All rights reserved.
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