74HC2G02 Datasheet, PDF (5/13 Pages) NXP Semiconductors – Dual 2-input NOR gate

NXP Semiconductors
74HC2G02; 74HCT2G02
Dual 2-input NOR gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
74HCT2G02
V_IH
HIGH-level input
voltage
V_IL
LOW-level input
voltage
V_OH
HIGH-level output
voltage
V_OL
LOW-level output
voltage
I_I
I_CC
∆I_CC
C_I
input leakage current
supply current
additional supply
current
input capacitance
V_CC = 4.5 V to 5.5 V
V_CC = 4.5 V to 5.5 V
V_I = V_IH or V_IL
I_O = −20 µA; V_CC = 4.5 V
I_O = −4.0 mA; V_CC = 4.5 V
V_I = V_IH or V_IL
I_O = 20 µA; V_CC = 4.5 V
I_O = 4.0 mA; V_CC = 4.5 V
V_I = V_CC or GND; V_CC = 5.5 V
V_I = V_CC or GND; I_O = 0 A;
V_CC = 5.5 V
per input; V_CC = 4.5 V to 5.5 V;
V_I = V_CC − 2.1 V; I_O = 0 A
[1] All typical values are measured at T_amb = 25 °C.
−40 °C to +85 °C
Min Typ^[1] Max
2.0 1.6
-
-
1.2 0.8
4.4 4.5
-
4.13 4.32 -
-
0 0.1
- 0.15 0.33
-
- ±1.0
-
-
10
-
- 375
-
1.5
-
−40 °C to +125 °C Unit
Min
Max
2.0
-
V
-
0.8 V
4.4
-
V
3.7
-
V
-
0.1 V
-
0.4 V
-
±1.0 µA
-
20
µA
-
410 µA
-
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ^[1] Max
74HC2G02
t_pd
propagation delay nA and nB to nY; see Figure 6
[2]
V_CC = 2.0 V
-
26
95
V_CC = 4.5 V
-
9
19
V_CC = 5.0 V; C_L = 15 pF
-
9
-
V_CC = 6.0 V
t_t
transition time see Figure 6
-
[3]
8
16
V_CC = 2.0 V
-
19
95
V_CC = 4.5 V
-
7
19
V_CC = 6.0 V
C_PD
power dissipation V_I = GND to V_CC
capacitance
-
[4]
-
5
16
10
-
−40 °C to +125 °C Unit
Min
Max
-
110 ns
-
22 ns
-
-
ns
-
20 ns
-
125 ns
-
25 ns
-
20 ns
-
-
pF
74HC_HCT2G02_4
Product data sheet
Rev. 04 — 11 May 2009
© NXP B.V. 2009. All rights reserved.
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