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| PMEM4020AND Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN transistor/Schottky rectifier module | |||
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NXP Semiconductors
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
NPN transistor
ICBO
ICEO
collector-base cut-off
current
collector-emitter
cut-off current
VCB = 40 V; IE = 0 A
VCB = 40 V; IE = 0 A;
Tj = 150 °C
VCE = 30 V; IB = 0 A
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
equivalent
on-resistance
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
VCE = 5 V; IC = 2 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 2 A; IB = 200 mA
IC = 1 A; IB = 100 mA
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
VBEon
base-emitter turn-on VCE = 5 V; IC = 1 A
voltage
fT
transition frequency VCE = 10 V; IC = 50 mA;
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Schottky barrier rectiï¬er
VF
continuous forward see Figure 1
voltage
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
IF = 1000 mA
IR
reverse current
see Figure 2
VR = 10 V
VR = 40 V
Cd
diode capacitance VR = 1 V; f = 1 MHz;
see Figure 3
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02
PMEM4020AND
NPN transistor/Schottky rectiï¬er module
Min
Typ
Max
Unit
-
-
100
nA
-
-
50
µA
-
-
100
nA
-
-
100
nA
300
-
-
300
-
900
200
-
-
[1] 75
-
-
-
-
75
mV
-
-
100
mV
-
-
190
mV
-
-
400
mV
[1] -
150
190
mâ¦
[1] -
-
1.2
V
[1] -
-
1.1
V
150
-
-
MHz
-
-
10
pF
[1] -
95
130
mV
[1] -
155
210
mV
[1] -
220
270
mV
[1] -
295
350
mV
[1] -
540
640
mV
[1] -
7
20
µA
[1] -
30
100
µA
-
43
48
pF
PMEM4020AND_2
Product data sheet
Rev. 02 â 31 August 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
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