PMEM4020AND Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN transistor/Schottky rectifier module

NXP Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
6. Thermal characteristics
Table 6. Thermal characteristics^[1]
Symbol Parameter
Single device
R_th(j-s) thermal resistance from
junction to soldering point
R_th(j-a) thermal resistance from
junction to ambient
Conditions
in free air
in free air
Combined device
R_th(j-a) thermal resistance from
junction to ambient
in free air
Min Typ Max Unit
[2] _-
-
95
K/W
[3] _-
-
250 K/W
[4] _-
-
315 K/W
[5] _-
-
425 K/W
[3] _-
-
208 K/W
[1] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses. Nomograms for determining the reverse
power losses P_R and I_F(AV) rating will be available on request.
[2] Soldering point of collector or cathode tab.
[3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm² mounting pad for both
collector and cathode tab.
[5] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
PMEM4020AND_2
Product data sheet
Rev. 02 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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