English
Language : 

PMEM4020AND Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN transistor/Schottky rectifier module
NXP Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IC
collector current (DC)
continuous
[1] -
continuous
[2] -
continuous
[3] -
continuous;
[4] -
Ts ≤ 55 °C
ICM
peak collector current
-
IBM
peak base current
-
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
Tamb ≤ 25 °C
[2] -
Tamb ≤ 25 °C
[3] -
Ts ≤ 55 °C
[4] -
Tj
junction temperature
-
Schottky barrier rectifier
VR
continuous reverse voltage
-
IF
continuous forward voltage
-
IFRM
repetitive peak forward
tp ≤ 1ms; δ ≤ 0.5
-
current
IFSM
non-repetitive peak forward t = 8 ms; square
-
current
wave
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
Tamb ≤ 25 °C
[2] -
Tamb ≤ 25 °C
[3] -
Ts ≤ 55 °C
[4] -
Tj
junction temperature
[2] -
Combined device
Ptot
Tstg
Tamb
total power dissipation
storage temperature
ambient temperature
Tamb ≤ 25 °C
[2] -
−65
[2] −65
Max Unit
0.95 A
1.30 A
1.65 A
2
A
3
A
1
A
295
mW
400
mW
500
mW
1000 mW
150
°C
40
V
1
A
3.5
A
10
A
295
mW
400
mW
500
mW
1000 mW
150
°C
600
mW
+150 °C
+150 °C
[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both
collector and cathode.
[3] Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4] Soldering point of collector or cathode tab.
PMEM4020AND_2
Product data sheet
Rev. 02 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
3 of 13