PIMC31 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW

NXP Semiconductors
PIMC31
500 mA, 50 V NPN/PNP double RET; R1 = 1 kΩ, R2 = 10 kΩ
10³
h_FE
10²
006aaa314
(1)
(2)
(3)
10^−1
V_CEsat
(V)
006aaa315
(1)
(2)
(3)
10
1
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 3. TR1 (NPN): DC current gain as a function of
collector current; typical values
1
10^−2
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 4.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
006aab055
V_CEsat
(V)
(1)
(2)
(3)
10^−1
10^−2
1
10
10²
10³
I_C (mA)
I_C/I_B = 50
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 5. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values
PIMC31_1
Product data sheet
Rev. 01 — 24 March 2009
© NXP B.V. 2009. All rights reserved.
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