PIMC31 Datasheet, PDF (3/13 Pages) NXP Semiconductors – 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW

NXP Semiconductors
PIMC31
500 mA, 50 V NPN/PNP double RET; R1 = 1 kΩ, R2 = 10 kΩ
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
I_O
output current
-
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
Per device
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb ≤ 25 °C
[1] _-
-
−55
−65
Max Unit
500
mA
290
mW
420
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
500
P_tot
(mW)
400
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300
200
100
0
−75
−25
25
FR4 PCB, standard footprint
Fig 1. Power derating curve
75
125
175
T_amb (°C)
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a)
thermal resistance from
junction to ambient
R_th(j-sp)
thermal resistance from
junction to solder point
Per device
R_th(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
in free air
Min Typ Max Unit
[1] _-
-
431 K/W
-
-
105 K/W
[1] _-
-
298 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PIMC31_1
Product data sheet
Rev. 01 — 24 March 2009
© NXP B.V. 2009. All rights reserved.
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