PDTC123TE Datasheet, PDF (5/10 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 killoohm, R2 = open

Philips Semiconductors
PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A
current
-
-
100 nA
I_CEO
collector-emitter cut-off V_CE = 30 V; I_B = 0 A
-
-
1
µA
current
V_CE = 30 V; I_B = 0 A;
-
-
50
µA
T_j = 150 °C
I_EBO
emitter-base cut-off
V_EB = 5 V; I_C = 0 A
current
-
-
100 nA
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 20 mA
30
-
I_C = 10 mA; I_B = 0.5 mA -
-
-
150 mV
R1
bias resistor 1 (input)
1.54 2.2 2.86 kΩ
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A; -
-
2.5
pF
f = 1 MHz
500
h_FE
(1)
400
(2)
300
200
(3)
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100
0
10^−1
1
10
10²
I_C (mA)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
1
V_CEsat
(V)
10^−1
(1)
(2)
(3)
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10^−2
10^−1
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTC123T_SER_1
Product data sheet
Rev. 01 — 10 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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