PDTC123TE Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 killoohm, R2 = open

PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 01 — 10 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number
Package
Philips
PDTC123TE
SOT416
PDTC123TK
SOT346
PDTC123TM
SOT883
PDTC123TS^[1]
SOT54
PDTC123TT
SOT23
PDTC123TU
SOT323
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTA123TE
PDTA123TK
PDTA123TM
PDTA123TS
PDTA123TT
PDTA123TU
1.2 Features
I Built-in bias resistors
I Simplifies circuit design
I 100 mA output current capability
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I Digital applications
I Control of IC inputs
I Cost-saving alternative for BC847 series
in digital applications
I Switching loads
1.4 Quick reference data
Table 2.
Symbol
V_CEO
I_O
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ
-
-
-
-
1.54 2.2
Max Unit
50
V
100 mA
2.86 kΩ