PDTA123E Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors

NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
PDTA123E series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
CONDITIONS
T_amb ≤ 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
VALUE
250
500
500
625
830
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
V_CB = −50 V; I_E = 0 A
V_CE = −30 V; I_B = 0 A
V_CE = −30 V; I_B = 0 A; T_j = 150 °C
V_EB = −5 V; I_C = 0 A
V_CE = −5 V; I_C = −20 mA
I_C = −10 mA; I_B = −0.5 mA
I_C = −1 mA; V_CE = −5 V
I_C = −20 mA; V_CE = −0.3 V
−
−
−
−
30
−
−
−2
1.54
−
−
−
−
−
−
−1.2
−1.6
2.2
−100 nA
−1
μA
−50 μA
−2
mA
−
−150 mV
−0.5 V
−
V
2.86 kΩ
R-----2--
R1
resistor ratio
0.8 1
1.2
C_c
collector capacitance
I_E = i_e = 0 A; V_CB = −10 V;
f = 1 MHz
−
−
3
pF
2004 Aug 02
5