PDTA123E Datasheet, PDF (4/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors

NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
PDTA123E series
ORDERING INFORMATION
TYPE NUMBER
PDTA123EE
−
PDTA123EEF
−
PDTA123EK
−
PDTA123EM
−
NAME
PDTA123ES
−
PDTA123ET
−
PDTA123EU
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
VERSION
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
MAX.
−50
−50
−10
+10
−12
−100
−100
500
250
250
200
150
250
250
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
2004 Aug 02
4