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PDTA123E Datasheet, PDF (2/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors | |||
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NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
PDTA123E series
FEATURES
⢠Built-in bias resistors
⢠Simplified circuit design
⢠Reduction of component count
⢠Reduced pick and place costs.
APPLICATIONS
⢠General purpose switching and amplification
⢠Inverter and interface circuits
⢠Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
â
â
2.2
2.2
MAX. UNIT
â50 V
â100 mA
â
kΩ
â
kΩ
DESCRIPTION
PNP resistor-equipped transistor (see âSimplified outline,
symbol and pinningâ for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA123EE
PDTA123EEF
PDTA123EK
PDTA123EM
PDTA123ES
PDTA123ET
PDTA123EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
â
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
5C
6C
42
F7
TA123E
*21(1)
*42(1)
PDTC123EE
PDTC123EEF
PDTC123EK
PDTC123EM
PDTC123ES
PDTC123ET
PDTC123EU
2004 Aug 02
2
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