PDTA115T Datasheet, PDF (5/17 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

NXP Semiconductors
PDTA115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −50 V; I_E = 0 A
current
I_CEO
I_EBO
collector-emitter
cut-off current
emitter-base cut-off
current
V_CE = −30 V; I_B = 0 A
V_CE = −30 V; I_B = 0 A;
T_j = 150 °C
V_EB = −5 V; I_C = 0 A
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = −5 V; I_C = −1 mA
I_C = −5 mA; I_B = −0.25 mA
R1
bias resistor 1 (input)
C_c
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
−100
nA
-
-
−1
µA
-
-
−50
µA
-
-
−100
nA
100
-
-
-
-
−150
mV
70
100
130
kΩ
-
-
3
pF
10³
h_FE
10²
001aab511
(1)
(2)
(3)
10
−10^−1
−1
−10
−10²
I_C (mA)
V_CE = −5 V.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig 1. DC current gain as a function of collector
current; typical values
−1
001aab512
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
−10^−2
−10^−1
−1
−10
−10²
I_C (mA)
I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA115T_SER_5
Product data sheet
Rev. 05 — 2 September 2009
© NXP B.V. 2009. All rights reserved.
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