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PDTA115T Datasheet, PDF (4/17 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 100 kW, R2 = open | |||
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NXP Semiconductors
PDTA115T series
PNP resistor-equipped transistors; R1 = 100 kâ¦, R2 = open
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IO
ICM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
output current (DC)
-
peak collector current
-
total power dissipation
Tamb ⤠25 °C
SOT416
[1] -
SOT346
[1] -
SOT883
[2][3] -
SOT54
[1] -
SOT23
[1] -
SOT323
[1] -
Tstg
storage temperature
â65
Tj
junction temperature
-
Tamb
ambient temperature
â65
Max Unit
â50
V
â50
V
â5
V
â100 mA
â100 mA
150
mW
250
mW
250
mW
500
mW
250
mW
200
mW
+150 °C
150
°C
+150 °C
[1] Refer to standard mounting conditions.
[2] Reï¬ow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Conditions
in free air
Min Typ Max Unit
[1] -
-
833 K/W
[1] -
-
500 K/W
[2][3] -
-
500 K/W
[1] -
-
250 K/W
[1] -
-
500 K/W
[1] -
-
625 K/W
[1] Refer to standard mounting conditions.
[2] Reï¬ow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.
PDTA115T_SER_5
Product data sheet
Rev. 05 â 2 September 2009
© NXP B.V. 2009. All rights reserved.
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