PDTA115T Datasheet, PDF (1/17 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

PDTA115T series
PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = open
Rev. 05 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP resistor-equipped transistors.
Table 1. Product overview
Type number
Package
NXP
PDTA115TE
SOT416
PDTA115TK
SOT346
PDTA115TM
SOT883
PDTA115TS^[1]
SOT54 (TO-92)
PDTA115TT
SOT23
PDTA115TU
SOT323
JEITA
SC-75
SC-59
SC-101
SC-43A
-
SC-70
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)
NPN complement
PDTC115TE
PDTC115TK
PDTC115TM
PDTC115TS
PDTC115TT
PDTC115TU
1.2 Features
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I General purpose switching and
amplification
I Inverter and interface circuits
I Circuit drivers
1.4 Quick reference data
Table 2.
Symbol
V_CEO
I_O
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min Typ Max Unit
-
-
−50 V
-
-
−100 mA
70
100 130 kΩ