PBHV9040T Datasheet, PDF (5/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
I_CBO
collector-base cut-off V_CB = −320 V; I_E = 0 A
-
current
V_CB = −320 V; I_E = 0 A;
-
T_j = 150 °C
I_CES
collector-emitter
V_CE = −320 V; V_BE = 0 V
-
cut-off current
I_EBO
emitter-base cut-off V_EB = −4 V; I_C = 0 A
-
current
h_FE
V_CEsat
V_BEsat
f_T
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency
V_CE = −10 V
I_C = −50 mA
I_C = −100 mA
I_C = −250 mA
I_C = −100 mA;
I_B = −20 mA
I_C = −100 mA;
I_B = −20 mA
V_CE = −10 V;
I_E = −10 mA;
f = 100 MHz
100
80
[1] ₁₀
-
[1] _-
-
C_c
collector capacitance V_CB = −20 V;
-
I_E = i_e = 0 A; f = 1 MHz
C_e
emitter capacitance V_EB = −0.5 V;
-
I_C = i_c = 0 A; f = 1 MHz
t_d
delay time
V_CC = −2 V;
-
t_r
rise time
I_C = −0.15 A;
I_Bon = −0.03 A;
-
t_on
turn-on time
I_Boff = 0.03 A
-
t_s
storage time
-
t_f
fall time
-
t_off
turn-off time
-
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
-
−100 nA
-
−10 µA
-
−100 nA
-
−100 nA
200 -
200 -
25
-
−110 −200 mV
−1
−1.1 V
55
-
MHz
7
-
pF
150 -
pF
9
-
ns
1810 -
ns
1819 -
ns
715 -
ns
1085 -
ns
1900 -
ns
PBHV9040T_1
Product data sheet
Rev. 01 — 13 February 2008
© NXP B.V. 2008. All rights reserved.
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