PBHV9040T Datasheet, PDF(1/12 Page) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

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PBHV9040T Datasheet, PDF (1/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

PBHV9040T

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

Rev. 01 â 13 February 2008

Product data sheet

1. Product proï¬le

1.1 General description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8540T.

1.2 Features

I High voltage

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I AEC-Q101 qualiï¬ed

1.3 Applications

I Electronic ballast for ï¬uorescent lighting

I LED driver for LED chain module

I LCD backlighting

I High Intensity Discharge (HID) front lighting

I Automotive motor management

I Hook switch for wired telecom

I Switch mode power supply

1.4 Quick reference data

Table 1.

Symbol

VCESM

VCEO

hFE

Quick reference data

Parameter

Conditions

collector-emitter peak voltage VBE = 0 V

collector-emitter voltage

open base

collector current

DC current gain

VCE = â10 V; IC = â50 mA

Min Typ Max Unit

- - â500 V

- - â400 V

- - â0.25 A

100 200 -

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