PBHV9040T Datasheet, PDF (4/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low V_CEsat (BISS) transistor
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions Min Typ Max Unit
R_th(j-a)
thermal resistance from junction to in free air ^[1] -
-
417 K/W
ambient
R_th(j-sp)
thermal resistance from junction to
solder point
-
-
70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10³
Z_th(j-a)
(K/W)
10²
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 _0.02
0.01
10
006aab151
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB)
PBHV9040T_1
Product data sheet
Rev. 01 — 13 February 2008
© NXP B.V. 2008. All rights reserved.
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