BYC8D-600 Datasheet, PDF (5/11 Pages) NXP Semiconductors – Hyperfast power diode Reduces switching losses in associated MOSFET

NXP Semiconductors
BYC8D-600
Hyperfast power diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V_F
forward voltage
I_R
reverse current
Dynamic characteristics
Q_r
recovered charge
t_rr
reverse recovery time
I_RM
peak reverse recovery
current
V_FR
forward recovery voltage
Conditions
I_F = 8 A; T_j = 25 °C
I_F = 8 A; T_j = 150 °C; see Figure 4
V_R = 600 V
V_R = 500 V; T_j = 100 °C
I_F = 1 A; V_R = 100 V; dI_F/dt = 100 A/µs;
T_j = 25 °C
I_F = 1 A; V_R = 30 V; dI_F/dt = 50 A/µs;
T_j = 25 °C
I_F = 8 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 100 °C
I_F = 8 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 25 °C; see Figure 5
I_F = 8 A; V_R = 400 V; dI_F/dt = 50 A/µs;
T_j = 125 °C
I_F = 8 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 100 °C
I_F = 10 A; dI_F/dt = 100 A/µs; T_j = 25 °C;
see Figure 6
Min Typ Max Unit
-
2
2.9 V
-
1.5 1.85 V
-
9
40 µA
-
1.1 3
mA
-
13
-
nC
-
30
52
ns
-
32
40
ns
-
20
-
ns
-
1.5 5.5 A
-
9.5 12 A
-
8
10 V
20
I_F
(A)
16
12
8
4
0
0
(1) (2)
1
2
003aac976
(3)
3
4
V_F (V)
I_F
dl_F
dt
t_rr
Q_r
I_R
I_RM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYC8D-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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