BYC8D-600 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Hyperfast power diode Reduces switching losses in associated MOSFET

BYC8D-600
Hyperfast power diode
Rev. 01 — 27 December 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
„ Low reverse recovery current and low
thermal resistance
„ Reduces switching losses in
associated MOSFET
1.3 Applications
„ Continuous Current Mode (CCM)
Power Factor Correction (PFC)
„ Half-bridge/full-bridge switched-mode
power supplies
„ Half-bridge lighting ballasts
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward current square-wave pulse; δ = 0.5 ;
T_mb ≤ 103 °C; see Figure 1;
see Figure 2
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 25 °C
I_F = 8 A; T_j = 150 °C;
see Figure 4
Dynamic characteristics
t_rr
reverse recovery time I_F = 8 A; V_R = 400 V;
dI_F/dt = 500 A/µs;
T_j = 25 °C; see Figure 5
Min Typ Max Unit
-
-
600 V
-
-
8
A
-
2 2.9 V
-
1.5 1.85 V
-
20 -
ns