BYC58X-600 Datasheet, PDF (5/11 Pages) NXP Semiconductors – 8 A hyperfast rectifier diode

NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
7. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
V_F
forward voltage
I_R
reverse current
Dynamic characteristics
Q_r
recovered charge
t_rr
reverse recovery time
I_RM
peak reverse recovery
current
Conditions
I_F = 8 A; T_j = 25 °C; see Figure 4
I_F = 8 A; T_j = 150 °C; see Figure 4
V_R = 600 V; T_j = 25 °C
I_F = 8 A; V_R = 400 V; dI_F/dt = 200 A/µs;
T_j = 125 °C; see Figure 5 and 6
I_F = 8 A; V_R = 400 V; dI_F/dt = 200 A/µs;
T_j = 25 °C; see Figure 6
I_F = 8 A; V_R = 400 V; dI_F/dt = 200 A/µs;
T_j = 125 °C; see Figure 6 and 7
I_F = 8 A; V_R = 400 V; dI_F/dt = 200 A/µs;
T_j = 125 °C
Min Typ Max Unit
-
2.35 3.2 V
-
2
2.4 V
-
-
150 µA
-
40
-
nC
-
12.5 -
ns
-
21
-
ns
-
4
5.5 A
20
I_F
(A)
16
12
8
4
0
0
003aae163
(1)
(2)
(3)
1
2
3
4
V_F (V)
140
Q_r
(nC)
120
100
80
60
40
20
0
0
003aae182
(1)
(2)
(3)
100
200
300
400
500
dI_F/dt (A/μs)
Fig 4. Forward current as a function of forward
voltage
Fig 5. Recovered charge as a function of rate of
change of forward current; Tj = 125 °C; typical
values
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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