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BYC58X-600 Datasheet, PDF (3/11 Pages) NXP Semiconductors – 8 A hyperfast rectifier diode
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NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
repetitive peak reverse
voltage
VRWM
crest working reverse
voltage
IF(AV)
average forward
current
square-wave pulse; δ = 0.5; Th ≤ 93 °C; see Figure 1
and 2
IFRM
repetitive peak forward square-wave pulse; δ = 0.5; tp = 25 µs
current
IFSM
non-repetitive peak
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C
forward current
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
-
600 V
-
600 V
-
8
A
-
16
A
-
110 A
-
120 A
-40 150 °C
-
150 °C
28
Ptot
(W)
24
20
16
12
8
4
0
0
0.2
0.1
4
003aae164 66
δ=1
Th(max)
(°C)
78
0.5
90
102
114
126
138
150
8
12
IF(AV) (A)
20
Ptot
(W)
16
12
8
4
0
0
003aae165
a = 180°
120
90
60
30
2
4
6
8
IF(AV) (A)
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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