BYC58X-600 Datasheet, PDF (2/11 Pages) NXP Semiconductors – 8 A hyperfast rectifier diode

NXP Semiconductors
BYC58X-600
8 A hyperfast rectifier diode
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Dynamic characteristics
t_rr
reverse recovery
I_F = 8 A; V_R = 400 V;
time
dI_F/dt = 200 A/µs; T_j = 25 °C;
see Figure 6
I_F = 8 A; V_R = 400 V;
dI_F/dt = 200 A/µs; T_j = 125 °C;
see Figure 6 and 7
Q_r
recovered charge I_F = 8 A; V_R = 400 V;
dI_F/dt = 200 A/µs; T_j = 125 °C;
see Figure 5 and 6
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 25 °C;
see Figure 4
I_F = 8 A; T_j = 150 °C;
see Figure 4
Min Typ Max Unit
-
12.5 -
ns
-
21 -
ns
-
40 -
nC
-
2.35 3.2 V
-
2
2.4 V
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
mb
n.c.
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
3. Ordering information
12
SOD113 (TO-220F)
Table 3. Ordering information
Type number
Package
Name
Description
BYC58X-600
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
Version
SOD113
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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