BFQ540_07 Datasheet, PDF (5/8 Pages) NXP Semiconductors – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Product specification
BFQ540
1.0
handbook, halfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA688
8 _{VCB (V)} 12
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
12
handbook, halfpage
fT
(GHz)
8
4
MRA689
VCE = 8V
VCE = 4V
0
10^−1
1
10 _{IC (mA)} 10²
f = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
handbook,²h⁰alfpage
dim
(dB)
30
MBG242
handb_do₂ok,²h⁰alfpage
(dB)
30
MBG243
40
40
50
50
60
70
10
20
30
40
50
60
IC (mA)
V_CE = 8 V; V_o = 475 mV; R_L = 50 Ω.
f_p + f_q − f_r = 793.25 MHz; T_amb = 25 °C.
Fig.6 Intermodulation distortion as a function of
collector current; typical values.
60
70
10
20
30
40
50
60
IC (mA)
V_CE = 8 V; V_o = 225 mV; R_L = 50 Ω; f_p + f_q = 810 MHz;
T_amb = 25 °C.
Fig.7 Second order intermodulation distortion as
a function of collector current; typical
values.
2000 May 23
5