BFQ540_07 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
T_s ≤ 60 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction
to soldering point
CONDITIONS
T_s ≤ 60 °C; P_tot = 1.2 W
Product specification
BFQ540
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
20
V
15
V
2
V
120 mA
1.2 W
+150 °C
175 °C
VALUE
95
UNIT
K/W
1.4
Ptot
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
MBG241
50
100
150 _{Tj (oC)} 200
10³
handbook, halfpage
IC
(mA)
10²
10
1
MBG244
10
VCE (V)
10²
V_CE ≤ 9 V.
Fig.2 Power derating curve.
Fig.3 SOAR.
2000 May 23
3