BFQ540_07 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN wideband transistor

Philips Semiconductors
NPN wideband transistor
Product specification
BFQ540
FEATURES
• High gain
• High output voltage
• Low noise
• Gold metallization ensures
excellent reliability
• Low thermal resistance.
APPLICATIONS
• VHF, UHF and CATV amplifiers.
DESCRIPTION
NPN wideband transistor in a SOT89
plastic package.
page
PINNING
PIN
DESCRIPTION
1 emitter
2 collector
3 base
1
2
3
Bottom view
MBK514
Marking code: N4.
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
V_EBO
I_C
P_tot
h_FE
f_T
s₂₁ ²
F
collector-base voltage
collector-emitter voltage
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
insertion power gain
noise figure
open emitter
R_BE = 0
open collector
T_s ≤ 60 °C; note 1
I_C = 40 mA; V_CE = 8 V; T_j = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V;
f = 900 MHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V;
f = 900 MHz; Γ_S = Γ_opt
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
100
−
TYP.
−
−
−
−
−
120
9
MAX. UNIT
20
V
15
V
2
V
120 mA
1.2 W
250
−
GHz
12
13
−
dB
−
1.9 2.4 dB
2000 May 23
2