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| BF1208D Datasheet, PDF (5/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET | |||
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
20
ID
(mA)
16
12
8
(4)
4
(5)
(6)
001aag356
(1)
(2)
(3)
0
0
1
2
3
4
5
VGG (V)
(1) ID(B); RG1 = 68 kâ¦.
(2) ID(B); RG1 = 86 kâ¦.
(3) ID(B); RG1 = 100 kâ¦.
(4) ID(A); RG1 = 100 kâ¦.
(5) ID(A); RG1 = 86 kâ¦.
(6) ID(A); RG1 = 68 kâ¦.
Fig 2. Drain currents of MOSFET A and B as a
function of VGG
8. Dynamic characteristics
G1A
G2
G1B
RG1
VGG
DA
S
DB
001aac205
VGG = 5 V: ampliï¬er A is off; ampliï¬er B is on.
VGG = 0 V: ampliï¬er A is on; ampliï¬er B is off.
Fig 3. Functional diagram
8.1 Dynamic characteristics for ampliï¬er A
Table 8. Dynamic characteristics for ampliï¬er A[1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min Typ
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
f = 100 MHz; Tj = 25 °C
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
26 31
[2] -
2.1
[2] -
3.4
[2] -
0.8
[2] -
30
Gtr
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32 36
f = 400 MHz; GS = 2 mS; GL = 1 mS
28 32
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
24 28
NF
noise ï¬gure
f = 11 MHz; GS = 20 mS; BS = 0 S
- 3.0
f = 400 MHz; YS = YS(opt)
- 0.9
f = 800 MHz; YS = YS(opt)
- 1.1
Max Unit
41 mS
2.6 pF
-
pF
-
pF
-
fF
40 dB
36 dB
33 dB
-
dB
1.5 dB
1.7 dB
BF1208D_1
Product data sheet
Rev. 01 â 16 May 2007
© NXP B.V. 2007. All rights reserved.
5 of 22
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