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BF1208D Datasheet, PDF (16/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
102
bis, gis
(mS)
10
1
001aag373
bis
102
Yfs
(mS)
10
001aag374 −102
Yfs
ϕfs
(deg)
−10
ϕfs
10−1
10
gis
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 29. Amplifier B: input admittance as a function of
frequency; typical values
103
Yrs
(µS)
102
001aag375 −103
ϕrs
(deg)
ϕrs
−102
Yrs
1
−1
10
102
103
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 30. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
10
bos, gos
(mS)
001aag376
1
bos
10
−10
10−1
gos
1
−1
10−2
10
102
103
10
102
103
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 31. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 15 mA
Fig 32. Amplifier B: output admittance as a function of
frequency; typical values
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
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