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BF1208D Datasheet, PDF (1/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET | |||
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BF1208D
Dual N-channel dual gate MOSFET
Rev. 01 â 16 May 2007
Product data sheet
1. Product proï¬le
CAUTION
1.1 General description
The BF1208D is a combination of two dual gate MOSFET ampliï¬ers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of ampliï¬er B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled ampliï¬ers in a single package. One with a fully
integrated bias and one with a partly integrated bias
I Internal switch to save external components
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise ampliï¬ers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment
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