BCM857BV Datasheet, PDF (5/15 Pages) NXP Semiconductors – PNP/PNP matched double transistors

NXP Semiconductors
BCM857BV/BS/DS
PNP/PNP matched double transistors
Table 8. Characteristics …continued
T_amb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
f_T
transition frequency V_CE = −5 V;
I_C = −10 mA;
f = 100 MHz
NF
noise figure
V_CE = −5 V;
I_C = −0.2 mA;
R_S = 2 kΩ;
f = 10 Hz to
15.7 kHz
V_CE = −5 V;
I_C = −0.2 mA;
R_S = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
h_FE1/h_FE2
h_FE matching
V_BE1−V_BE2 V_BE matching
V_CE = −5 V;
I_C = −2 mA
V_CE = −5 V;
I_C = −2 mA
Min Typ Max Unit
100 175 -
MHz
-
1.6 -
dB
-
3.1 -
dB
[3] _0.9
1
-
[4] _-
-
2
mV
[1] V_BEsat decreases by about 1.7 mV/K with increasing temperature.
[2] V_BE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
BCM857BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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